Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs

10.1002/pssc.200983452

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Bibliographic Details
Main Authors: Tian, F., Chor, E.F.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83815
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Institution: National University of Singapore
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