Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure

10.1109/IEDM.2013.6724643

Saved in:

Bibliographic Details
Main Authors:	Goh, K.H., Guo, Y., Gong, X., Liang, G.-C., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84001
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-84001
record_format	dspace
spelling	sg-nus-scholar.10635-840012015-01-25T16:17:21Z Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure Goh, K.H. Guo, Y. Gong, X. Liang, G.-C. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2013.6724643 Technical Digest - International Electron Devices Meeting, IEDM 16.5.1-16.5.4 TDIMD 2014-10-07T04:47:39Z 2014-10-07T04:47:39Z 2013 Conference Paper Goh, K.H.,Guo, Y.,Gong, X.,Liang, G.-C.,Yeo, Y.-C. (2013). Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure. Technical Digest - International Electron Devices Meeting, IEDM : 16.5.1-16.5.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2013.6724643" target="_blank">https://doi.org/10.1109/IEDM.2013.6724643</a> 9781479923076 01631918 http://scholarbank.nus.edu.sg/handle/10635/84001 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/IEDM.2013.6724643
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Goh, K.H. Guo, Y. Gong, X. Liang, G.-C. Yeo, Y.-C.
format	Conference or Workshop Item
author	Goh, K.H. Guo, Y. Gong, X. Liang, G.-C. Yeo, Y.-C.
spellingShingle	Goh, K.H. Guo, Y. Gong, X. Liang, G.-C. Yeo, Y.-C. Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure
author_sort	Goh, K.H.
title	Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure
title_short	Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure
title_full	Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure
title_fullStr	Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure
title_full_unstemmed	Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure
title_sort	near ballistic sub-7 nm junctionless fet featuring 1 nm extremely-thin channel and raised s/d structure
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84001
_version_	1681089539063414784

Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure

Similar Items