Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure

Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure

10.1109/IEDM.2013.6724643

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Bibliographic Details
Main Authors:	Goh, K.H., Guo, Y., Gong, X., Liang, G.-C., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84001
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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