Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors: Shen, C., Li, M.F., Wang, X.P., Yu, H.Y., Feng, Y.P., Lim, A.T.-L., Yeo, Y.C., Chan, D.S.H., Kwong, D.L.
Other Authors: PHYSICS
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84003
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Institution: National University of Singapore
Description
Summary:Technical Digest - International Electron Devices Meeting, IEDM