Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors

10.1109/INEC.2011.5991642

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Bibliographic Details
Main Authors:	Lam, K.-T., Peck, Y.-Z., Lim, Z.-H., Liang, G.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	density functinoal theory field-effect transistor graphene nanoribbon Schottky barrier simulation
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84074
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84074
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spelling	sg-nus-scholar.10635-840742015-01-07T04:47:50Z Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors Lam, K.-T. Peck, Y.-Z. Lim, Z.-H. Liang, G. ELECTRICAL & COMPUTER ENGINEERING density functinoal theory field-effect transistor graphene nanoribbon Schottky barrier simulation 10.1109/INEC.2011.5991642 Proceedings - International NanoElectronics Conference, INEC - 2014-10-07T04:48:29Z 2014-10-07T04:48:29Z 2011 Conference Paper Lam, K.-T.,Peck, Y.-Z.,Lim, Z.-H.,Liang, G. (2011). Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors. Proceedings - International NanoElectronics Conference, INEC : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/INEC.2011.5991642" target="_blank">https://doi.org/10.1109/INEC.2011.5991642</a> 9781457703799 21593523 http://scholarbank.nus.edu.sg/handle/10635/84074 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	density functinoal theory field-effect transistor graphene nanoribbon Schottky barrier simulation
spellingShingle	density functinoal theory field-effect transistor graphene nanoribbon Schottky barrier simulation Lam, K.-T. Peck, Y.-Z. Lim, Z.-H. Liang, G. Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors
description	10.1109/INEC.2011.5991642
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lam, K.-T. Peck, Y.-Z. Lim, Z.-H. Liang, G.
format	Conference or Workshop Item
author	Lam, K.-T. Peck, Y.-Z. Lim, Z.-H. Liang, G.
author_sort	Lam, K.-T.
title	Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors
title_short	Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors
title_full	Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors
title_fullStr	Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors
title_full_unstemmed	Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors
title_sort	performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon schottky barrier field-effect transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84074
_version_	1681089552316366848

Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors

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