Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors

Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors

10.1109/INEC.2011.5991642

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書目詳細資料
Main Authors:	Lam, K.-T., Peck, Y.-Z., Lim, Z.-H., Liang, G.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
主題:	density functinoal theory field-effect transistor graphene nanoribbon Schottky barrier simulation
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/84074
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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