Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors

10.1109/VLSIT.2008.4588605

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Main Authors:	Wong, H.-S., Liu, F.-Y., Ang, K.-W., Koh, S.-M., Koh, A.T.-Y., Liow, T.-Y., Lee, R.T.-P., Lim, A.E.-J., Fang, W.-W., Zhu, M., Chan, L., Balasubramaniam, N., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84165
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84165
record_format	dspace
spelling	sg-nus-scholar.10635-841652015-01-07T04:44:02Z Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors Wong, H.-S. Liu, F.-Y. Ang, K.-W. Koh, S.-M. Koh, A.T.-Y. Liow, T.-Y. Lee, R.T.-P. Lim, A.E.-J. Fang, W.-W. Zhu, M. Chan, L. Balasubramaniam, N. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VLSIT.2008.4588605 Digest of Technical Papers - Symposium on VLSI Technology 168-169 DTPTE 2014-10-07T04:49:33Z 2014-10-07T04:49:33Z 2008 Conference Paper Wong, H.-S.,Liu, F.-Y.,Ang, K.-W.,Koh, S.-M.,Koh, A.T.-Y.,Liow, T.-Y.,Lee, R.T.-P.,Lim, A.E.-J.,Fang, W.-W.,Zhu, M.,Chan, L.,Balasubramaniam, N.,Samudra, G.,Yeo, Y.-C. (2008). Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors. Digest of Technical Papers - Symposium on VLSI Technology : 168-169. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSIT.2008.4588605" target="_blank">https://doi.org/10.1109/VLSIT.2008.4588605</a> 9781424418053 07431562 http://scholarbank.nus.edu.sg/handle/10635/84165 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VLSIT.2008.4588605
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wong, H.-S. Liu, F.-Y. Ang, K.-W. Koh, S.-M. Koh, A.T.-Y. Liow, T.-Y. Lee, R.T.-P. Lim, A.E.-J. Fang, W.-W. Zhu, M. Chan, L. Balasubramaniam, N. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Wong, H.-S. Liu, F.-Y. Ang, K.-W. Koh, S.-M. Koh, A.T.-Y. Liow, T.-Y. Lee, R.T.-P. Lim, A.E.-J. Fang, W.-W. Zhu, M. Chan, L. Balasubramaniam, N. Samudra, G. Yeo, Y.-C.
spellingShingle	Wong, H.-S. Liu, F.-Y. Ang, K.-W. Koh, S.-M. Koh, A.T.-Y. Liow, T.-Y. Lee, R.T.-P. Lim, A.E.-J. Fang, W.-W. Zhu, M. Chan, L. Balasubramaniam, N. Samudra, G. Yeo, Y.-C. Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors
author_sort	Wong, H.-S.
title	Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors
title_short	Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors
title_full	Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors
title_fullStr	Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors
title_full_unstemmed	Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors
title_sort	selenium co-implantation and segregation as a new contact technology for nanoscale soi n-fets featuring nisi:c formed on silicon-carbon (si:c) source/drain stressors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84165
_version_	1681089568655278080

Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors

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