Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement

10.1109/ISDRS.2007.4422229

Saved in:

Bibliographic Details
Main Authors:	Wang, G.H., Toh, E.-H., Weeks, D., Landin, T., Spear, J., Tung, C.H., Thomas, S.G., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84234
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-84234
record_format	dspace
spelling	sg-nus-scholar.10635-842342015-01-08T00:46:48Z Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement Wang, G.H. Toh, E.-H. Weeks, D. Landin, T. Spear, J. Tung, C.H. Thomas, S.G. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ISDRS.2007.4422229 2007 International Semiconductor Device Research Symposium, ISDRS - 2014-10-07T04:50:20Z 2014-10-07T04:50:20Z 2007 Conference Paper Wang, G.H.,Toh, E.-H.,Weeks, D.,Landin, T.,Spear, J.,Tung, C.H.,Thomas, S.G.,Samudra, G.,Yeo, Y.-C. (2007). Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement. 2007 International Semiconductor Device Research Symposium, ISDRS : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISDRS.2007.4422229" target="_blank">https://doi.org/10.1109/ISDRS.2007.4422229</a> 1424418917 http://scholarbank.nus.edu.sg/handle/10635/84234 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/ISDRS.2007.4422229
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, G.H. Toh, E.-H. Weeks, D. Landin, T. Spear, J. Tung, C.H. Thomas, S.G. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Wang, G.H. Toh, E.-H. Weeks, D. Landin, T. Spear, J. Tung, C.H. Thomas, S.G. Samudra, G. Yeo, Y.-C.
spellingShingle	Wang, G.H. Toh, E.-H. Weeks, D. Landin, T. Spear, J. Tung, C.H. Thomas, S.G. Samudra, G. Yeo, Y.-C. Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement
author_sort	Wang, G.H.
title	Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement
title_short	Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement
title_full	Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement
title_fullStr	Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement
title_full_unstemmed	Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement
title_sort	strained si n-fet featuring compliant sige stress transfer layer (stl) and si0.98c0.02 source/drain stressors for performance enhancement
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84234
_version_	1681089581178421248

Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement

Similar Items