Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement

10.1109/ESSDERC.2007.4430940

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Bibliographic Details
Main Authors:	Wang, G.H., Toh, E.-H., Foo, Y.-L., Tripathy, S., Balakumar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84341
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84341
record_format	dspace
spelling	sg-nus-scholar.10635-843412015-01-07T15:32:35Z Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement Wang, G.H. Toh, E.-H. Foo, Y.-L. Tripathy, S. Balakumar, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ESSDERC.2007.4430940 ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference 311-314 2014-10-07T04:51:34Z 2014-10-07T04:51:34Z 2008 Conference Paper Wang, G.H.,Toh, E.-H.,Foo, Y.-L.,Tripathy, S.,Balakumar, S.,Lo, G.-Q.,Samudra, G.,Yeo, Y.-C. (2008). Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement. ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference : 311-314. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ESSDERC.2007.4430940" target="_blank">https://doi.org/10.1109/ESSDERC.2007.4430940</a> 1424411238 http://scholarbank.nus.edu.sg/handle/10635/84341 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/ESSDERC.2007.4430940
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, G.H. Toh, E.-H. Foo, Y.-L. Tripathy, S. Balakumar, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Wang, G.H. Toh, E.-H. Foo, Y.-L. Tripathy, S. Balakumar, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C.
spellingShingle	Wang, G.H. Toh, E.-H. Foo, Y.-L. Tripathy, S. Balakumar, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C. Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement
author_sort	Wang, G.H.
title	Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement
title_short	Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement
title_full	Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement
title_fullStr	Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement
title_full_unstemmed	Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement
title_sort	uniaxial strained silicon n-fets on silicon-germanium-on-insulator substrates with an e-si0.7ge0.3 stress transfer layer and source/drain stressors for performance enhancement
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84341
_version_	1681089600687177728

Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement

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