Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement

• Main Authors: Wang, G.H., Toh, E.-H., Foo, Y.-L., Tripathy, S., Balakumar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84341
• Institution: National University of Singapore

10.1109/ESSDERC.2007.4430940