Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology

• Main Authors: Gong, X., Han, G., Su, S., Cheng, R., Guo, P., Bai, F., Yang, Y., Zhou, Q., Liu, B., Goh, K.H., Zhang, G., Xue, C., Cheng, B., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84342
• Institution: National University of Singapore

Digest of Technical Papers - Symposium on VLSI Technology