Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology

Digest of Technical Papers - Symposium on VLSI Technology

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Bibliographic Details
Main Authors: Gong, X., Han, G., Su, S., Cheng, R., Guo, P., Bai, F., Yang, Y., Zhou, Q., Liu, B., Goh, K.H., Zhang, G., Xue, C., Cheng, B., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84342
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Institution: National University of Singapore
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