Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology

Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology

Digest of Technical Papers - Symposium on VLSI Technology

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Main Authors: Gong, X., Han, G., Su, S., Cheng, R., Guo, P., Bai, F., Yang, Y., Zhou, Q., Liu, B., Goh, K.H., Zhang, G., Xue, C., Cheng, B., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84342
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-843422015-01-08T00:27:05Z Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology Gong, X. Han, G. Su, S. Cheng, R. Guo, P. Bai, F. Yang, Y. Zhou, Q. Liu, B. Goh, K.H. Zhang, G. Xue, C. Cheng, B. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Digest of Technical Papers - Symposium on VLSI Technology T34-T35 DTPTE 2014-10-07T04:51:35Z 2014-10-07T04:51:35Z 2013 Conference Paper Gong, X.,Han, G.,Su, S.,Cheng, R.,Guo, P.,Bai, F.,Yang, Y.,Zhou, Q.,Liu, B.,Goh, K.H.,Zhang, G.,Xue, C.,Cheng, B.,Yeo, Y.-C. (2013). Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology. Digest of Technical Papers - Symposium on VLSI Technology : T34-T35. ScholarBank@NUS Repository. 9784863483477 07431562 http://scholarbank.nus.edu.sg/handle/10635/84342 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Digest of Technical Papers - Symposium on VLSI Technology
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Gong, X.
Han, G.
Su, S.
Cheng, R.
Guo, P.
Bai, F.
Yang, Y.
Zhou, Q.
Liu, B.
Goh, K.H.
Zhang, G.
Xue, C.
Cheng, B.
Yeo, Y.-C.
format Conference or Workshop Item
author Gong, X.
Han, G.
Su, S.
Cheng, R.
Guo, P.
Bai, F.
Yang, Y.
Zhou, Q.
Liu, B.
Goh, K.H.
Zhang, G.
Xue, C.
Cheng, B.
Yeo, Y.-C.
spellingShingle Gong, X.
Han, G.
Su, S.
Cheng, R.
Guo, P.
Bai, F.
Yang, Y.
Zhou, Q.
Liu, B.
Goh, K.H.
Zhang, G.
Xue, C.
Cheng, B.
Yeo, Y.-C.
Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology
author_sort Gong, X.
title Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology
title_short Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology
title_full Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology
title_fullStr Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology
title_full_unstemmed Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology
title_sort uniaxially strained germanium-tin (gesn) gate-all-around nanowire pfets enabled by a novel top-down nanowire formation technology
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/84342
_version_ 1681089600883261440

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