Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology
Digest of Technical Papers - Symposium on VLSI Technology
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Main Authors: | Gong, X., Han, G., Su, S., Cheng, R., Guo, P., Bai, F., Yang, Y., Zhou, Q., Liu, B., Goh, K.H., Zhang, G., Xue, C., Cheng, B., Yeo, Y.-C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84342 |
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Institution: | National University of Singapore |
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