Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics

Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics

Digest of Technical Papers - Symposium on VLSI Technology

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Bibliographic Details
Main Authors: Huang, C.H., Yang, M.Y., Chin, A., Chen, W.J., Zhu, C.X., Cho, B.J., Li, M.-F., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84351
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Institution: National University of Singapore
Description
Summary:Digest of Technical Papers - Symposium on VLSI Technology

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