Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics

Digest of Technical Papers - Symposium on VLSI Technology

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Main Authors:	Huang, C.H., Yang, M.Y., Chin, A., Chen, W.J., Zhu, C.X., Cho, B.J., Li, M.-F., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84351
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84351
record_format	dspace
spelling	sg-nus-scholar.10635-843512015-01-08T12:57:28Z Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics Huang, C.H. Yang, M.Y. Chin, A. Chen, W.J. Zhu, C.X. Cho, B.J. Li, M.-F. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING Digest of Technical Papers - Symposium on VLSI Technology 119-120 DTPTE 2014-10-07T04:51:41Z 2014-10-07T04:51:41Z 2003 Conference Paper Huang, C.H.,Yang, M.Y.,Chin, A.,Chen, W.J.,Zhu, C.X.,Cho, B.J.,Li, M.-F.,Kwong, D.L. (2003). Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics. Digest of Technical Papers - Symposium on VLSI Technology : 119-120. ScholarBank@NUS Repository. 07431562 http://scholarbank.nus.edu.sg/handle/10635/84351 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Digest of Technical Papers - Symposium on VLSI Technology
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Huang, C.H. Yang, M.Y. Chin, A. Chen, W.J. Zhu, C.X. Cho, B.J. Li, M.-F. Kwong, D.L.
format	Conference or Workshop Item
author	Huang, C.H. Yang, M.Y. Chin, A. Chen, W.J. Zhu, C.X. Cho, B.J. Li, M.-F. Kwong, D.L.
spellingShingle	Huang, C.H. Yang, M.Y. Chin, A. Chen, W.J. Zhu, C.X. Cho, B.J. Li, M.-F. Kwong, D.L. Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics
author_sort	Huang, C.H.
title	Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics
title_short	Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics
title_full	Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics
title_fullStr	Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics
title_full_unstemmed	Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics
title_sort	very low defects and high performance ge-on-insulator p-mosfets with al2o3 gate dielectrics
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84351
_version_	1681089602557837312

Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics

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