Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics

• Main Authors: Huang, C.H., Yang, M.Y., Chin, A., Chen, W.J., Zhu, C.X., Cho, B.J., Li, M.-F., Kwong, D.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84351
• Institution: National University of Singapore

Digest of Technical Papers - Symposium on VLSI Technology