Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric

Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric

Japanese Journal of Applied Physics, Part 2: Letters

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Bibliographic Details
Main Authors: Joo, M.S., Cho, B.J., Yeo, C.C., Wu, N., Yu, H., Zhu, C., Li, M.F., Kwong, D.-L., Balasubramanian, N.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Others
Published: 2014
Subjects:
ALCVD
Hafnium alloy
Hafnium oxide
High-K
Thermal stability
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84395
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Institution: National University of Singapore
Description
Summary:Japanese Journal of Applied Physics, Part 2: Letters

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