Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric

• Main Authors: Joo, M.S., Cho, B.J., Yeo, C.C., Wu, N., Yu, H., Zhu, C., Li, M.F., Kwong, D.-L., Balasubramanian, N.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Others
• Published: 2014
• Subjects: ALCVD; Hafnium alloy; Hafnium oxide; High-K; Thermal stability
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84395
• Institution: National University of Singapore

Japanese Journal of Applied Physics, Part 2: Letters