Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric
Japanese Journal of Applied Physics, Part 2: Letters
Saved in:
Main Authors: | Joo, M.S., Cho, B.J., Yeo, C.C., Wu, N., Yu, H., Zhu, C., Li, M.F., Kwong, D.-L., Balasubramanian, N. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Others |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84395 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics
by: Lee, S., et al.
Published: (2014) -
Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process
by: Joo, M.S., et al.
Published: (2014) -
HfO2 gate dielectrics for future generation of CMOS device application
by: Yu, H.Y., et al.
Published: (2014) -
The electrical and material properties of HfO xN y dielectric on germanium substrate
by: Zhang, Q., et al.
Published: (2014) -
TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode
by: Lee, S., et al.
Published: (2014)