Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric

Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric

Japanese Journal of Applied Physics, Part 2: Letters

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Bibliographic Details
Main Authors: Joo, M.S., Cho, B.J., Yeo, C.C., Wu, N., Yu, H., Zhu, C., Li, M.F., Kwong, D.-L., Balasubramanian, N.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Others
Published: 2014
Subjects:
ALCVD
Hafnium alloy
Hafnium oxide
High-K
Thermal stability
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84395
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-843952015-01-11T05:33:03Z Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric Joo, M.S. Cho, B.J. Yeo, C.C. Wu, N. Yu, H. Zhu, C. Li, M.F. Kwong, D.-L. Balasubramanian, N. ELECTRICAL & COMPUTER ENGINEERING ALCVD Hafnium alloy Hafnium oxide High-K Thermal stability Japanese Journal of Applied Physics, Part 2: Letters 42 3 A L220-L222 JAPLD 2014-10-07T04:52:12Z 2014-10-07T04:52:12Z 2003-03-01 Others Joo, M.S.,Cho, B.J.,Yeo, C.C.,Wu, N.,Yu, H.,Zhu, C.,Li, M.F.,Kwong, D.-L.,Balasubramanian, N. (2003-03-01). Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric. Japanese Journal of Applied Physics, Part 2: Letters 42 (3 A) : L220-L222. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/84395 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
topic ALCVD
Hafnium alloy
Hafnium oxide
High-K
Thermal stability
spellingShingle ALCVD
Hafnium alloy
Hafnium oxide
High-K
Thermal stability
Joo, M.S.
Cho, B.J.
Yeo, C.C.
Wu, N.
Yu, H.
Zhu, C.
Li, M.F.
Kwong, D.-L.
Balasubramanian, N.
Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric
description Japanese Journal of Applied Physics, Part 2: Letters
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Joo, M.S.
Cho, B.J.
Yeo, C.C.
Wu, N.
Yu, H.
Zhu, C.
Li, M.F.
Kwong, D.-L.
Balasubramanian, N.
format Others
author Joo, M.S.
Cho, B.J.
Yeo, C.C.
Wu, N.
Yu, H.
Zhu, C.
Li, M.F.
Kwong, D.-L.
Balasubramanian, N.
author_sort Joo, M.S.
title Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric
title_short Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric
title_full Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric
title_fullStr Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric
title_full_unstemmed Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric
title_sort dependence of chemical composition ratio on electrical properties of hfo2-al2o3 gate dielectric
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/84395
_version_ 1681089610633969664

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