Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

10.1109/LED.2003.814024

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Bibliographic Details
Main Authors: Kim, S.J., Cho, B.J., Li, M.-F., Zhu, C., Chin, A., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Others
Published: 2014
Subjects:
Capacitance density
Co-sputtering
HfO2
Lanthanide
Metal-insulator-metal (MIM) capacitor
Voltage coefficient of capacitor (VCC)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84412
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Institution: National University of Singapore
Description
Summary:10.1109/LED.2003.814024

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