Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors
10.1109/LED.2003.814024
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2014
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sg-nus-scholar.10635-844122023-10-30T22:56:08Z Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors Kim, S.J. Cho, B.J. Li, M.-F. Zhu, C. Chin, A. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Capacitance density Co-sputtering HfO2 Lanthanide Metal-insulator-metal (MIM) capacitor Voltage coefficient of capacitor (VCC) 10.1109/LED.2003.814024 IEEE Electron Device Letters 24 7 442-444 EDLED 2014-10-07T04:52:23Z 2014-10-07T04:52:23Z 2003-07 Others Kim, S.J., Cho, B.J., Li, M.-F., Zhu, C., Chin, A., Kwong, D.-L. (2003-07). Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors. IEEE Electron Device Letters 24 (7) : 442-444. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.814024 07413106 http://scholarbank.nus.edu.sg/handle/10635/84412 000184454900008 Scopus |
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Capacitance density Co-sputtering HfO2 Lanthanide Metal-insulator-metal (MIM) capacitor Voltage coefficient of capacitor (VCC) |
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Capacitance density Co-sputtering HfO2 Lanthanide Metal-insulator-metal (MIM) capacitor Voltage coefficient of capacitor (VCC) Kim, S.J. Cho, B.J. Li, M.-F. Zhu, C. Chin, A. Kwong, D.-L. Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors |
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10.1109/LED.2003.814024 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Kim, S.J. Cho, B.J. Li, M.-F. Zhu, C. Chin, A. Kwong, D.-L. |
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Others |
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Kim, S.J. Cho, B.J. Li, M.-F. Zhu, C. Chin, A. Kwong, D.-L. |
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Kim, S.J. |
title |
Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors |
title_short |
Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors |
title_full |
Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors |
title_fullStr |
Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors |
title_full_unstemmed |
Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors |
title_sort |
lanthanide (tb)-doped hfo2 for high-density mim capacitors |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/84412 |
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1781784449493499904 |