Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

10.1109/LED.2003.814024

Saved in:

Bibliographic Details
Main Authors:	Kim, S.J., Cho, B.J., Li, M.-F., Zhu, C., Chin, A., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Others
Published:	2014
Subjects:	Capacitance density Co-sputtering HfO2 Lanthanide Metal-insulator-metal (MIM) capacitor Voltage coefficient of capacitor (VCC)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84412
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

PVD HfO2 for high-precision MIM capacitor applications
by: Kim, S.J., et al.
Published: (2014)

A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics
by: Yu, X., et al.
Published: (2014)

Modeling the negative quadratic VCC of SiO2 in MIM capacitor
by: Phung, T.H., et al.
Published: (2014)

Performance Improvement of Sm2O3 MIM capacitors by using plasma treatment after dielectric formation
by: Yang, J.-J., et al.
Published: (2014)

MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics
by: Hu, H., et al.
Published: (2014)

Effective modulation of quadratic voltage coefficient of capacitance in MIM capacitors using Sm2O3SiO2 dielectric stack
by: Yang, J.-J., et al.
Published: (2014)

A high performance MIM capacitor using HfO 2 dielectrics
by: Hu, H., et al.
Published: (2014)

High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics
by: Ding, S.-J., et al.
Published: (2014)

Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric
by: Chiang, K.C., et al.
Published: (2014)

RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
by: Ding, S.-J., et al.
Published: (2014)

High-k Metal-Insulator-Metal (MIM) capacitors for RF/Mixed-Signal IC applications
by: KIM SUN JUNG
Published: (2010)

Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers
by: Kim, S.-J., et al.
Published: (2014)

Substrate effects on resonant frequency of silicon-based RF on-chip MIM capacitor
by: Xiong, Y.-Z., et al.
Published: (2014)

High-K dielectric MIM capacitors for Silicon RF and analog applications
by: HU HANG
Published: (2011)

Very high density RF MIM capacitor compatible with VLSI
by: Chiang, K.C., et al.
Published: (2014)

Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF application
by: Yu, M.B., et al.
Published: (2014)

High-performance MIM capacitors using HfLaO-based dielectrics
by: Zhang, L., et al.
Published: (2014)

High-density MIM capacitors using AlTaOx dielectrics
by: Yang, M.Y., et al.
Published: (2014)

Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications
by: Chen, J.-D., et al.
Published: (2014)

High-K Dielectrics in Metal Insulator Metal (MIM) Capacitors for RF Applications
by: PHUNG THANH HOA
Published: (2012)

Fabrication and characteristics of high-k MIM capacitors for high precision applications
by: YANG JIANJUN
Published: (2010)

Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics
by: Yang, M.Y., et al.
Published: (2014)

Atomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications
by: Zhu, C., et al.
Published: (2014)

Closed-loop analytic filtering scheme of capacitor voltage ripple in multilevel cascaded H-bridge converters
by: Rodriguez, Ezequiel Ramos, et al.
Published: (2020)

Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias
by: Lin, Ye, et al.
Published: (2020)

NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric
by: Chen, J., et al.
Published: (2014)

Lanthanoid based materials in advanced CMOS technology
by: CHEN JINGDE
Published: (2010)

Modeling, fabrication, and characterization of 3-D capacitor embedded in through-silicon via
by: Lin, Ye, et al.
Published: (2020)

Three-dimensional capacitor embedded in fully Cu-filled through-silicon via and its thermo-mechanical reliability for power delivery applications
by: Lin, Ye, et al.
Published: (2020)

HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC Applications
by: Kim, S.J., et al.
Published: (2014)

Effects of sulfur passivation on germanium MOS capacitors With HfON gate dielectric
by: Xie, R., et al.
Published: (2014)

High power Na-ion capacitor with TiS2 as insertion host
by: Chaturvedi, Apoorva, et al.
Published: (2020)

A single source switched-capacitor 13-level inverter with triple voltage boosting and reduced component count
by: Tayyab, Mohammad, et al.
Published: (2022)

The electrical and material properties of HfO xN y dielectric on germanium substrate
by: Zhang, Q., et al.
Published: (2014)

Modulation methods for balancing the capacitor voltages of N-level diode-clamped converters
by: Yuan, Huawei, et al.
Published: (2023)

Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitors
by: Ling, C.H., et al.
Published: (2014)

Development and evaluation of a module on capacitor
by: Baranquel, Ernie M.
Published: (2000)

Multiple-Vector Model Predictive Power Control of Four-Switch Three-Phase Rectifiers with Capacitor Voltage Balancing
by: Zhou, Dehong, et al.
Published: (2018)

The feasibility of establishing a plastic film capacitor manufacturing plant in the Philippines
by: Villanueva, Dorothy L.
Published: (1979)

Capacitor-voltage feedforward with full delay compensation to improve weak grids adaptability of LCL-filtered grid-connected converters for distributed generation systems
by: Li, Xiaoqiang, et al.
Published: (2019)