Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

10.1109/LED.2003.814024

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書目詳細資料
Main Authors: Kim, S.J., Cho, B.J., Li, M.-F., Zhu, C., Chin, A., Kwong, D.-L.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Others
出版: 2014
主題:
Capacitance density
Co-sputtering
HfO2
Lanthanide
Metal-insulator-metal (MIM) capacitor
Voltage coefficient of capacitor (VCC)
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/84412
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機構: National University of Singapore

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