Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers
10.1007/s11051-008-9551-4
Saved in:
Main Authors: | Yin, Z., Tang, X., Zhang, J., Zhao, J., Deny, S., Gong, H. |
---|---|
Other Authors: | MATERIALS SCIENCE AND ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/86647 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Compositional effect on the optical absorption and photoluminescence ofCdSxSe1-x quantum dots embedded in borosilicate glasses
by: Kumar, J., et al.
Published: (2014) -
Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures
by: Chia, C.K., et al.
Published: (2014) -
Testing the upper limit of InAs/GaAs self-organized quantum dots density by fast growth rate
by: Chia, C.K., et al.
Published: (2014) -
Quantitative strain analysis of InAs/GaAs quantum dot materials
by: Vullum, Per Erik, et al.
Published: (2018) -
Effects of annealing on performances of 1.3-?m InAs-InGaAs-GaAs quantum dot electroabsorption modulators
by: Lee, S.Y, et al.
Published: (2020)