Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication

Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication

10.1116/1.1503791

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Bibliographic Details
Main Authors: Sin, C.-Y., Chen, B.-H., Loh, W.L., Yu, J., Yelehanka, P., See, A., Chan, L.
Other Authors: CHEMICAL & ENVIRONMENTAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/92306
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Institution: National University of Singapore
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Summary:10.1116/1.1503791

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