Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control

Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control

Inorganica Chimica Acta

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Main Authors: Zybill, C.E., Huang, W.
Other Authors: CHEMISTRY
Format: Article
Published: 2014
Subjects:
Deposition mechanism
DFT
Iron silicides
MOCVD
UPS
Online Access:http://scholarbank.nus.edu.sg/handle/10635/93845
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-938452015-01-16T11:01:05Z Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control Zybill, C.E. Huang, W. CHEMISTRY Deposition mechanism DFT Iron silicides MOCVD UPS Inorganica Chimica Acta 291 1-2 380-387 ICHAA 2014-10-16T08:29:06Z 2014-10-16T08:29:06Z 1999-08 Article Zybill, C.E.,Huang, W. (1999-08). Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control. Inorganica Chimica Acta 291 (1-2) : 380-387. ScholarBank@NUS Repository. 00201693 http://scholarbank.nus.edu.sg/handle/10635/93845 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
topic Deposition mechanism
DFT
Iron silicides
MOCVD
UPS
spellingShingle Deposition mechanism
DFT
Iron silicides
MOCVD
UPS
Zybill, C.E.
Huang, W.
Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control
description Inorganica Chimica Acta
author2 CHEMISTRY
author_facet CHEMISTRY
Zybill, C.E.
Huang, W.
format Article
author Zybill, C.E.
Huang, W.
author_sort Zybill, C.E.
title Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control
title_short Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control
title_full Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control
title_fullStr Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control
title_full_unstemmed Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control
title_sort formation of fesi and fesi2 films from cis-fe(sicl3)2(co)4 by mocvd -precursor versus substrate control
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/93845
_version_ 1681091190868410368

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