Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control

Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control

Inorganica Chimica Acta

Saved in:
Bibliographic Details
Main Authors: Zybill, C.E., Huang, W.
Other Authors: CHEMISTRY
Format: Article
Published: 2014
Subjects:
Deposition mechanism
DFT
Iron silicides
MOCVD
UPS
Online Access:http://scholarbank.nus.edu.sg/handle/10635/93845
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/93845

Similar Items