Formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by MOCVD -precursor versus substrate control

• Main Authors: Zybill, C.E., Huang, W.
• Other Authors: CHEMISTRY
• Format: Article
• Published: 2014
• Subjects: Deposition mechanism; DFT; Iron silicides; MOCVD; UPS
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/93845
• Institution: National University of Singapore

Inorganica Chimica Acta