Analysis of high-power devices using proton beam induced currents
Microelectronics Reliability
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sg-nus-scholar.10635-957722015-01-20T01:19:38Z Analysis of high-power devices using proton beam induced currents Zmeck, M. Osipowicz, T. Watt, F. Niedernostheide, F. Schulze, H.-J. Fiege, G.B.M. Balk, L. PHYSICS Microelectronics Reliability 40 8-10 1413-1418 MCRLA 2014-10-16T09:15:38Z 2014-10-16T09:15:38Z 2000 Article Zmeck, M.,Osipowicz, T.,Watt, F.,Niedernostheide, F.,Schulze, H.-J.,Fiege, G.B.M.,Balk, L. (2000). Analysis of high-power devices using proton beam induced currents. Microelectronics Reliability 40 (8-10) : 1413-1418. ScholarBank@NUS Repository. 00262714 http://scholarbank.nus.edu.sg/handle/10635/95772 NOT_IN_WOS Scopus |
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PHYSICS Zmeck, M. Osipowicz, T. Watt, F. Niedernostheide, F. Schulze, H.-J. Fiege, G.B.M. Balk, L. |
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Zmeck, M. Osipowicz, T. Watt, F. Niedernostheide, F. Schulze, H.-J. Fiege, G.B.M. Balk, L. |
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Zmeck, M. Osipowicz, T. Watt, F. Niedernostheide, F. Schulze, H.-J. Fiege, G.B.M. Balk, L. Analysis of high-power devices using proton beam induced currents |
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Zmeck, M. |
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Analysis of high-power devices using proton beam induced currents |
title_short |
Analysis of high-power devices using proton beam induced currents |
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Analysis of high-power devices using proton beam induced currents |
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Analysis of high-power devices using proton beam induced currents |
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Analysis of high-power devices using proton beam induced currents |
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analysis of high-power devices using proton beam induced currents |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/95772 |
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