Analysis of high-power devices using proton beam induced currents

Analysis of high-power devices using proton beam induced currents

Microelectronics Reliability

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Bibliographic Details
Main Authors:	Zmeck, M., Osipowicz, T., Watt, F., Niedernostheide, F., Schulze, H.-J., Fiege, G.B.M., Balk, L.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/95772
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Institution:	National University of Singapore

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