Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques

Materials Science Forum

Saved in:

Bibliographic Details
Main Authors:	Feng, Z.C., Ferguson, I., Stall, R.A., Li, K., Shi, Y., Singh, H., Tone, K., Zhao, J.H., Wee, A.T.S., Tan, K.L., Adar, F., Lenain, B.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Subjects:	6H-SiC Annealing FTIR Ion-Implantation Raman Scattering SIMS X-Ray Diffraction
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/96355
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-96355
record_format	dspace
spelling	sg-nus-scholar.10635-963552024-11-12T21:15:59Z Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques Feng, Z.C. Ferguson, I. Stall, R.A. Li, K. Shi, Y. Singh, H. Tone, K. Zhao, J.H. Wee, A.T.S. Tan, K.L. Adar, F. Lenain, B. PHYSICS 6H-SiC Annealing FTIR Ion-Implantation Raman Scattering SIMS X-Ray Diffraction Materials Science Forum 264-268 PART 2 693-696 MSFOE 2014-10-16T09:22:28Z 2014-10-16T09:22:28Z 1998 Article Feng, Z.C.,Ferguson, I.,Stall, R.A.,Li, K.,Shi, Y.,Singh, H.,Tone, K.,Zhao, J.H.,Wee, A.T.S.,Tan, K.L.,Adar, F.,Lenain, B. (1998). Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques. Materials Science Forum 264-268 (PART 2) : 693-696. ScholarBank@NUS Repository. 02555476 http://scholarbank.nus.edu.sg/handle/10635/96355 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	6H-SiC Annealing FTIR Ion-Implantation Raman Scattering SIMS X-Ray Diffraction
spellingShingle	6H-SiC Annealing FTIR Ion-Implantation Raman Scattering SIMS X-Ray Diffraction Feng, Z.C. Ferguson, I. Stall, R.A. Li, K. Shi, Y. Singh, H. Tone, K. Zhao, J.H. Wee, A.T.S. Tan, K.L. Adar, F. Lenain, B. Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques
description	Materials Science Forum
author2	PHYSICS
author_facet	PHYSICS Feng, Z.C. Ferguson, I. Stall, R.A. Li, K. Shi, Y. Singh, H. Tone, K. Zhao, J.H. Wee, A.T.S. Tan, K.L. Adar, F. Lenain, B.
format	Article
author	Feng, Z.C. Ferguson, I. Stall, R.A. Li, K. Shi, Y. Singh, H. Tone, K. Zhao, J.H. Wee, A.T.S. Tan, K.L. Adar, F. Lenain, B.
author_sort	Feng, Z.C.
title	Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques
title_short	Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques
title_full	Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques
title_fullStr	Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques
title_full_unstemmed	Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques
title_sort	effects of al-c ion-implantation and annealing in epitaxial 6h-sic studied by structural and optical techniques
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/96355
_version_	1821191774813552640

Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques

Similar Items