Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques

Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques

Materials Science Forum

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Bibliographic Details
Main Authors: Feng, Z.C., Ferguson, I., Stall, R.A., Li, K., Shi, Y., Singh, H., Tone, K., Zhao, J.H., Wee, A.T.S., Tan, K.L., Adar, F., Lenain, B.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
6H-SiC
Annealing
FTIR
Ion-Implantation
Raman Scattering
SIMS
X-Ray Diffraction
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96355
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Institution: National University of Singapore

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