Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition
10.1063/1.1344218
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sg-nus-scholar.10635-963682023-10-25T21:02:16Z Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition Cui, J. Rusli, R. Yoon, S.F. Yu, M.B. Chew, K. Ahn, J. Zhang, Q. Teo, E.J. Osipowicz, T. Watt, F. PHYSICS 10.1063/1.1344218 Journal of Applied Physics 89 5 2699-2705 JAPIA 2014-10-16T09:22:37Z 2014-10-16T09:22:37Z 2001-03-01 Article Cui, J., Rusli, R., Yoon, S.F., Yu, M.B., Chew, K., Ahn, J., Zhang, Q., Teo, E.J., Osipowicz, T., Watt, F. (2001-03-01). Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition. Journal of Applied Physics 89 (5) : 2699-2705. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1344218 00218979 http://scholarbank.nus.edu.sg/handle/10635/96368 000167133000032 Scopus |
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Asia |
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Singapore Singapore |
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10.1063/1.1344218 |
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PHYSICS |
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PHYSICS Cui, J. Rusli, R. Yoon, S.F. Yu, M.B. Chew, K. Ahn, J. Zhang, Q. Teo, E.J. Osipowicz, T. Watt, F. |
| format |
Article |
| author |
Cui, J. Rusli, R. Yoon, S.F. Yu, M.B. Chew, K. Ahn, J. Zhang, Q. Teo, E.J. Osipowicz, T. Watt, F. |
| spellingShingle |
Cui, J. Rusli, R. Yoon, S.F. Yu, M.B. Chew, K. Ahn, J. Zhang, Q. Teo, E.J. Osipowicz, T. Watt, F. Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition |
| author_sort |
Cui, J. |
| title |
Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition |
| title_short |
Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition |
| title_full |
Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition |
| title_fullStr |
Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition |
| title_full_unstemmed |
Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition |
| title_sort |
effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/96368 |
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1781786439671873536 |