Elimination of O2 plasma damage of low-k methyl silsesquioxane film by As implantation

Elimination of O2 plasma damage of low-k methyl silsesquioxane film by As implantation

10.1016/S0040-6090(01)01401-8

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Bibliographic Details
Main Authors: Wang, C.Y., Zheng, J.Z., Shen, Z.X., Lin, Y., Wee, A.T.S.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
Dielectrics
Fourier-transform infrared spectroscopy
Ion implantation
Secondary ion mass spectrometry
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96442
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Institution: National University of Singapore
Description
Summary:10.1016/S0040-6090(01)01401-8

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