Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level

Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level

10.1016/j.nimb.2007.02.051

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Bibliographic Details
Main Authors: van Kan, J.A., Bettiol, A.A., Watt, F.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
Direct write
High aspect ratio
Proton beam writing
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96852
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Institution: National University of Singapore
Description
Summary:10.1016/j.nimb.2007.02.051

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