Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level

10.1016/j.nimb.2007.02.051

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Bibliographic Details
Main Authors:	van Kan, J.A., Bettiol, A.A., Watt, F.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Subjects:	Direct write High aspect ratio Proton beam writing
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/96852
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-96852
record_format	dspace
spelling	sg-nus-scholar.10635-968522023-10-26T09:20:51Z Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level van Kan, J.A. Bettiol, A.A. Watt, F. PHYSICS Direct write High aspect ratio Proton beam writing 10.1016/j.nimb.2007.02.051 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 260 1 396-399 NIMBE 2014-10-16T09:28:17Z 2014-10-16T09:28:17Z 2007-07 Article van Kan, J.A., Bettiol, A.A., Watt, F. (2007-07). Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 260 (1) : 396-399. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2007.02.051 0168583X http://scholarbank.nus.edu.sg/handle/10635/96852 000248264900076 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Direct write High aspect ratio Proton beam writing
spellingShingle	Direct write High aspect ratio Proton beam writing van Kan, J.A. Bettiol, A.A. Watt, F. Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level
description	10.1016/j.nimb.2007.02.051
author2	PHYSICS
author_facet	PHYSICS van Kan, J.A. Bettiol, A.A. Watt, F.
format	Article
author	van Kan, J.A. Bettiol, A.A. Watt, F.
author_sort	van Kan, J.A.
title	Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level
title_short	Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level
title_full	Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level
title_fullStr	Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level
title_full_unstemmed	Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level
title_sort	hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/96852
_version_	1781786554450051072

Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level

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