Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20 nm level

• Main Authors: van Kan, J.A., Bettiol, A.A., Watt, F.
• Other Authors: PHYSICS
• Format: Article
• Published: 2014
• Subjects: Direct write; High aspect ratio; Proton beam writing
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/96852
• Institution: National University of Singapore

10.1016/j.nimb.2007.02.051