Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor

Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor

10.1063/1.2354446

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Bibliographic Details
Main Authors: Ong, K.K., Pey, K.L., Lee, P.S., Wee, A.T.S., Wang, X.C., Tung, C.H., Tang, L.J., Chong, Y.F.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/97835
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Institution: National University of Singapore
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Summary:10.1063/1.2354446

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