Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy

Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy

10.1063/1.1592310

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Bibliographic Details
Main Authors: Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/98031
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/98031

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