Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrate

Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrate

10.1063/1.2930687

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Bibliographic Details
Main Authors: Tan, D.X.M., Pey, K.L., Ong, K.K., Colombeau, B., Ng, C.M., Yeong, S.H., Wee, A.T.S., Liu, C.J., Wang, X.C.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/98543
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Institution: National University of Singapore
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Summary:10.1063/1.2930687

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