Interface Engineering in the High-k Dielectric Gate Stacks

10.1002/9783527646340.ch9

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Bibliographic Details
Main Authors:	Wang, S., Feng, Y., Huan, A.C.H.
Other Authors:	PHYSICS
Format:	Others
Published:	2014
Subjects:	Gate dielectric Heterojunction High-k dielectric material Keywords: band offset Metal/semiconductor interfaces Schottky barrier height
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/98980
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Institution:	National University of Singapore

Description
Summary:	10.1002/9783527646340.ch9

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