Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions

Poly(methyl methacrylate) is a common polymer used as a lithographic resist for all forms of particle (photon, ion and electron) beam writing. Faithful lithographic reproduction requires that the exposure dose, Θ, lies in the windowΘ0≤Θ<Θ×0, whereΘ0and Θ×0represent the clearing and cross-linking...

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Main Authors: Nitipon Puttaraksa, Rattanaporn Norarat, Mikko Laitinen, Timo Sajavaara, Somsorn Singkarat, Harry J. Whitlow
Format: Journal
Published: 2018
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http://cmuir.cmu.ac.th/jspui/handle/6653943832/51997
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Institution: Chiang Mai University
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spelling th-cmuir.6653943832-519972018-09-04T06:14:36Z Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions Nitipon Puttaraksa Rattanaporn Norarat Mikko Laitinen Timo Sajavaara Somsorn Singkarat Harry J. Whitlow Physics and Astronomy Poly(methyl methacrylate) is a common polymer used as a lithographic resist for all forms of particle (photon, ion and electron) beam writing. Faithful lithographic reproduction requires that the exposure dose, Θ, lies in the windowΘ0≤Θ<Θ×0, whereΘ0and Θ×0represent the clearing and cross-linking onset doses, respectively. In this work we have used the programmable proximity aperture ion beam lithography systems in Chiang Mai and Jyväskylä to determine the exposure characteristics in terms of fluence for 2 MeV protons, 3 MeV4He2+and 6 MeV12C3+ions, respectively. After exposure the samples were developed in 7:3 by volume propan-2-ol:de-ionised water mixture. At low fluences, where the fluence is below the clearing fluence, the exposed regions were characterised by rough regions, particularly for He with holes around the ion tracks. As the fluence (dose) increases so that the dose exceeds the clearing dose, the PMMA is uniformly removed with sharp vertical walls. When Θ exceeds the cross-linking onset fluence, the bottom of the exposed regions show undissolved PMMA. © 2011 Elsevier B.V. All rights reserved. 2018-09-04T06:14:36Z 2018-09-04T06:14:36Z 2012-02-01 Journal 0168583X 2-s2.0-84655168022 10.1016/j.nimb.2011.01.056 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84655168022&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/51997
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
topic Physics and Astronomy
spellingShingle Physics and Astronomy
Nitipon Puttaraksa
Rattanaporn Norarat
Mikko Laitinen
Timo Sajavaara
Somsorn Singkarat
Harry J. Whitlow
Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions
description Poly(methyl methacrylate) is a common polymer used as a lithographic resist for all forms of particle (photon, ion and electron) beam writing. Faithful lithographic reproduction requires that the exposure dose, Θ, lies in the windowΘ0≤Θ<Θ×0, whereΘ0and Θ×0represent the clearing and cross-linking onset doses, respectively. In this work we have used the programmable proximity aperture ion beam lithography systems in Chiang Mai and Jyväskylä to determine the exposure characteristics in terms of fluence for 2 MeV protons, 3 MeV4He2+and 6 MeV12C3+ions, respectively. After exposure the samples were developed in 7:3 by volume propan-2-ol:de-ionised water mixture. At low fluences, where the fluence is below the clearing fluence, the exposed regions were characterised by rough regions, particularly for He with holes around the ion tracks. As the fluence (dose) increases so that the dose exceeds the clearing dose, the PMMA is uniformly removed with sharp vertical walls. When Θ exceeds the cross-linking onset fluence, the bottom of the exposed regions show undissolved PMMA. © 2011 Elsevier B.V. All rights reserved.
format Journal
author Nitipon Puttaraksa
Rattanaporn Norarat
Mikko Laitinen
Timo Sajavaara
Somsorn Singkarat
Harry J. Whitlow
author_facet Nitipon Puttaraksa
Rattanaporn Norarat
Mikko Laitinen
Timo Sajavaara
Somsorn Singkarat
Harry J. Whitlow
author_sort Nitipon Puttaraksa
title Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions
title_short Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions
title_full Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions
title_fullStr Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions
title_full_unstemmed Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions
title_sort lithography exposure characteristics of poly(methyl methacrylate) (pmma) for carbon, helium and hydrogen ions
publishDate 2018
url https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84655168022&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/51997
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