Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions

• Main Authors: Nitipon Puttaraksa, Rattanaporn Norarat, Mikko Laitinen, Timo Sajavaara, Somsorn Singkarat, Harry J. Whitlow
• Format: Journal
• Published: 2018
• Subjects: Physics and Astronomy
• Online Access: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84655168022&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/51997
• Institution: Chiang Mai University

Poly(methyl methacrylate) is a common polymer used as a lithographic resist for all forms of particle (photon, ion and electron) beam writing. Faithful lithographic reproduction requires that the exposure dose, Θ, lies in the windowΘ0≤Θ<Θ×0, whereΘ0and Θ×0represent the clearing and cross-linking...