Direct writing of channels for microfluidics in silica by MeV ion beam lithography

The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here,...

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Bibliographic Details
Main Authors: Nitipon Puttaraksa, Mari Napari, Orapin Chienthavorn, Rattanaporn Norarat, Timo Sajavaara, Mikko Laitinen, Somsorn Singkarat, Harry J. Whitlow
Format: Book Series
Published: 2018
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Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79960058706&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/49961
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Institution: Chiang Mai University