Direct writing of channels for microfluidics in silica by MeV ion beam lithography

• Main Authors: Nitipon Puttaraksa, Mari Napari, Orapin Chienthavorn, Rattanaporn Norarat, Timo Sajavaara, Mikko Laitinen, Somsorn Singkarat, Harry J. Whitlow
• Format: Book Series
• Published: 2018
• Subjects: Engineering
• Online Access: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79960058706&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/49961
• Institution: Chiang Mai University

The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO 2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated. © (2011) Trans Tech Publications, Switzerland.