Direct writing of channels for microfluidics in silica by MeV ion beam lithography
The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here,...
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| Main Authors: | , , , , , , , |
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| Format: | Book Series |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79960058706&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/49961 |
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| Institution: | Chiang Mai University |