Direct writing of channels for microfluidics in silica by MeV ion beam lithography

• Main Authors: Puttaraksa N., Napari M., Chienthavorn O., Norarat R., Sajavaara T., Laitinen M., Singkarat S., Whitlow H.J.
• Format: Conference or Workshop Item
• Language: English
• Published: 2014
• Online Access: http://www.scopus.com/inward/record.url?eid=2-s2.0-79960058706&partnerID=40&md5=c38a6e7a4f8f01c7c8b4087193beba01; http://cmuir.cmu.ac.th/handle/6653943832/6521
• Institution: Chiang Mai University

The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here,...