Direct writing of channels for microfluidics in silica by MeV ion beam lithography

Direct writing of channels for microfluidics in silica by MeV ion beam lithography

The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here,...

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Main Authors: Puttaraksa N., Napari M., Chienthavorn O., Norarat R., Sajavaara T., Laitinen M., Singkarat S., Whitlow H.J.
Format: Conference or Workshop Item
Language:English
Published: 2014
Online Access:http://www.scopus.com/inward/record.url?eid=2-s2.0-79960058706&partnerID=40&md5=c38a6e7a4f8f01c7c8b4087193beba01
http://cmuir.cmu.ac.th/handle/6653943832/6521
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Institution: Chiang Mai University
Language: English
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spelling th-cmuir.6653943832-65212014-08-30T03:24:18Z Direct writing of channels for microfluidics in silica by MeV ion beam lithography Puttaraksa N. Napari M. Chienthavorn O. Norarat R. Sajavaara T. Laitinen M. Singkarat S. Whitlow H.J. The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO 2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated. © (2011) Trans Tech Publications, Switzerland. 2014-08-30T03:24:18Z 2014-08-30T03:24:18Z 2011 Conference Paper 9.78304E+12 10226680 10.4028/www.scientific.net/AMR.254.132 85424 http://www.scopus.com/inward/record.url?eid=2-s2.0-79960058706&partnerID=40&md5=c38a6e7a4f8f01c7c8b4087193beba01 http://cmuir.cmu.ac.th/handle/6653943832/6521 English
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
language English
description The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO 2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated. © (2011) Trans Tech Publications, Switzerland.
format Conference or Workshop Item
author Puttaraksa N.
Napari M.
Chienthavorn O.
Norarat R.
Sajavaara T.
Laitinen M.
Singkarat S.
Whitlow H.J.
spellingShingle Puttaraksa N.
Napari M.
Chienthavorn O.
Norarat R.
Sajavaara T.
Laitinen M.
Singkarat S.
Whitlow H.J.
Direct writing of channels for microfluidics in silica by MeV ion beam lithography
author_facet Puttaraksa N.
Napari M.
Chienthavorn O.
Norarat R.
Sajavaara T.
Laitinen M.
Singkarat S.
Whitlow H.J.
author_sort Puttaraksa N.
title Direct writing of channels for microfluidics in silica by MeV ion beam lithography
title_short Direct writing of channels for microfluidics in silica by MeV ion beam lithography
title_full Direct writing of channels for microfluidics in silica by MeV ion beam lithography
title_fullStr Direct writing of channels for microfluidics in silica by MeV ion beam lithography
title_full_unstemmed Direct writing of channels for microfluidics in silica by MeV ion beam lithography
title_sort direct writing of channels for microfluidics in silica by mev ion beam lithography
publishDate 2014
url http://www.scopus.com/inward/record.url?eid=2-s2.0-79960058706&partnerID=40&md5=c38a6e7a4f8f01c7c8b4087193beba01
http://cmuir.cmu.ac.th/handle/6653943832/6521
_version_ 1681420629392228352

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